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| T-1 (3mm) INFRA-RED EMITTING DIODE L-34F3BT Features !MECHANICALLY Description AND SPECTRALLY MATCHED F3 Made with Gallium Arsenide Infrared Emitting diodes. TO THE L-32P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAA4947 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:DEC/27/2002 DRAWN:Y.H.LI PAGE: 1 OF 3 Selection Guide Iv (m c d ) @ 20 m A *50m A Min . 1.6 L-34F3BT GaAs BLUE TRANSPARENT *7 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA. P ar t N o . Dic e L en s Ty p e V i ew i n g An g l e 21/2 50 50 Ty p . 10 *20 Electrical / Optical Characteristics at TA=25C P ar am et er Forward Voltage Reverse Current Capacitance Peak Spectral Wavelength Spectral Bandwidth P/N F3 F3 F3 F3 F3 Sy m b o l VF IR C P 1/2 Ty p . 1.2 90 940 50 Max . 1.6 10 Un it V uA pF nm nm Co n d itio n IF = 2 0 m A V R= 5 V V F = 0 V;f= 1 M Hz IF = 2 0 m A IF = 2 0 m A Absolute Maximum Ratings at TA=25C P ar am et er Power Dissipation Forward Current Peak Forward Current[1] Reverse Voltage Operating Temperature Storage Temperature Lead Solder Temperature[2] Notes: 1. 1/100 Duty Cycle,10us Pulse Width. 2. 2mm below package base. Sy m b o l PT IF i FS VR TA TSTG F3 F3 100 50 1.2 5 -40~ +85 -40~ +85 260C For 5 Seconds Un its mW mA A V C C SPEC NO: DSAA4947 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:DEC/27/2002 DRAWN:Y.H.LI PAGE: 2 OF 3 L-34F3BT SPEC NO: DSAA4947 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:DEC/27/2002 DRAWN:Y.H.LI PAGE: 3 OF 3 |
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